Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition-Reference-Cited by-同舟云学术

Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition

Published:2017-03 Issue: Volume:60 Page:40-44
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Panda Debiprasad,Balgarkashi Akshay,Shetty Saikalash,Ghadi Hemant,Tongbram Binita,Chakrabarti Subhananda

Funder

Department of Science and Technology, Government of India

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Quantum dots and their multimodal applications: a review;Bera;Materials,2010

2. Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001);Weber;Appl. Phys. Lett.,1999

3. Characterization of self-assembled InGaAs/InGaP quantum dot Mid-infrared photoconductive detectors grown by low-pressure MOCVD;Kim;Proc. SPIE 3629, Photo.: Mater. Devices IV,1999

4. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode;Seifert;Prog. Cryst. Growth Charact.,1996

5. Quantum Dot Heterostructure;Bimberg,1999

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