An approach to increase the integration rate of planar drift heterobipolar transistors
Author:
Funder
Russian Federation Government
Scientific School of Russia
Nizhny Novgorod State University of Architecture and Civil Engineering
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference35 articles.
1. Basis of Microelectronics;Stepanenko,1980
2. Microcircuitry;Alexenko,1990
3. Technology of Microelectronic Devices;Gotra,1991
4. Basis of Microelectronics;Avaev,1991
5. Electronics;Lachin,2001
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