Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias-Reference-Cited by-同舟云学术

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Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias

Published:2015-07 Issue: Volume:35 Page:30-33
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hsieh Wei-Kang,Lam Kin-Tak,Chang Shoou-Jinn

Funder

Advanced Optoelectronic Technology Center

NCKU

Bureau of Energy, Ministry of Economic Affairs of Taiwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

2. Developments in nanocrystal memory

3. Nanoionics-based resistive switching memories

4. Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories

5. Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

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1. Configurable Synaptic and Stochastic Neuronal Functions in ZnTe‐Based Memristor for an RBM Neural Network;Advanced Science;2024-09-05

2. The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode;Electronic Materials;2024-06-06

3. Microwave facilitated HfO2-ZnO nanospheres: Goaded electro-catalytic and electrical functionality maximization in multifold energy systems;International Journal of Hydrogen Energy;2024-01

4. Bipolar resistive switching behavior and endurance in RF-sputtered bilayer HfO2/ZrO2 resistive random access memory;Emergent Materials;2023-11-08

5. Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories;Ceramics International;2023-11

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