Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors-Reference-Cited by-同舟云学术

Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors

Published:2015-10 Issue: Volume:38 Page:50-56
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Trinh Thanh Thuy,Jang Kyungsoo,Velumani S.,Dao Vinh Ai,Yi Junsin

Funder

Ministry of Education

Korea Government Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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