Alternative voltage-contrast inspection for pMOS leakage due to adjacent nMOS contact-to-poly misalignment

Author:

Chen Hunglin,Fan Rongwei,Lou Hsiaochi,Huang Yiping

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

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4. C. Boye, T. Standeart, F. Wang, S.C. Lei, S.-T. Chen, J. Jau, D. Tomlison, in: Proceedings of the 23rd Annual Advanced Semiconductor Manufacturing Conference, IEEE, 2012, pp. 371–374.

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