A novel phosphorus diffusion process for front-side P–N junction fabrication in PERC solar cells-Reference-Cited by-同舟云学术

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A novel phosphorus diffusion process for front-side P–N junction fabrication in PERC solar cells

Published:2024-09 Issue: Volume:180 Page:108552
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Huang Yixuan,Jiang Longqing,Yan Long,Yang Yang,Chen Rulong,Cui Hui,Su Geng,Zhang Honggang,Yang Baoju,Hong Juan^ORCID

Funder

333 Project of Jiangsu Province

“333 Project” of Jiangsu Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference40 articles.

1. Investigation of the P-doped lead-free glass frit based on the principle of low-temperature phosphorus diffusion for multicrystalline silicon solar cells;Zhou;Sol. Energy Mater. Sol. Cell.,2021

2. Chemical stoichiometry effect of hafnium oxide (HfOX) for passivation layer of PERC solar cells;Kim;Mater. Sci. Semicond. Process.,2022

3. High efficiency inline diffused emitter (ILDE) solar cells on mono-crystalline CZ silicon;Ebong;Progress in Photovoltaics,2010

4. Optimization of phosphorus dopant profile of industrial p-type mono PERC solar cells;Ye;Sol. Energy Mater. Sol. Cell.,2019

5. Enhancement of the conversion efficiency of selective emitter PERC solar cells by post-oxidation;Tong;Mater. Sci. Semicond. Process.,2022

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