Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si-Reference-Cited by-同舟云学术

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Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

Published:2024-10 Issue: Volume:181 Page:108579
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ziegelwanger T.^ORCID,Reisinger M.,Matoy K.,Medjahed A.A.,Zalesak J.,Gruber M.,Meindlhumer M.,Keckes J.

Funder

Austrian Research Promotion Agency

European Synchrotron Radiation Facility

Central European Institute of Technology

MEYS CR

Publisher

Elsevier BV

Reference46 articles.

1. Three-dimensional silicon integration;Knickerbocker;IBM J. Res. Dev.,2008

2. Overview and outlook of through‐silicon via (TSV) and 3D integrations;Lau;Microelectron. Int.,2011

3. Integrated circuit packaging review with an emphasis on 3D packaging;Lancaster;Integration,2018

4. Ultrathin wafer pre-assembly and assembly process technologies: a review;Marks;Crit. Rev. Solid State Mater. Sci.,2015

5. Femtosecond laser dicing of ultrathin Si wafers with Cu backside layer - a fracture strength and microstructural study;Marks;J. Manuf. Process.,2021

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