Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration-Reference-Cited by-同舟云学术

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Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration

Published:2017-11 Issue: Volume:71 Page:326-331
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Yan,Wang Heng,Liu Bo,Cheng Yan,Song Sannian,Wu Liangcai,Zhou Dong,Song Zhitang

Funder

National Natural Science Foundation of China, China

West Light foundation of Chinese Academy of Sciences, China

Chinese Academy of Sciences

National Integrate Circuit Research Program of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Satoru Hanzawa, Naoki Kitai, Kenichi Osada, Akira Kotabe, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura, Masahiro Moniwa, Takayuki Kawahara, A 512kB embedded phase change memory with 416kB/s write throughput at 100μA cell write current, in: Proceedings of the 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, pp. 474–616.

2. Hongwei Hong, Chien Wang, Ruizhe Wang, Sam Sheng, Zhongling Zhou, Charlie Hwang, Christopher Scoville, Don Labrecque, Ryan Jurasek, Van Butler, Wolfgang Hokenmaier, A 90nm 512Kb embedded phase-change memory macro with fast read access time for digital multimedia broadcasting applications, in: Proceedings of the 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012, pp. 1–3.

3. W.C. Chien, H.Y. Cheng, M. BrightSky, A. Ray, C.W. Yeh, W. Kim, R. Bruce, Y. Zhu, H.Y. Ho, H.L. Lung, C. Lam, Reliability study of a 128Mb phase change memory chipimplemented with doped Ga-Sb-Ge with extraordinary thermal stability, in: Proceedings of the 2016 IEEE International Electron Devices Meeting (IEDM), 2016, pp. 21.1.1–21.1.4.

4. Optimization of 40-nm node epitaxial diode array for phase-change memory application;Liu;IEEE Electron Device Lett.,2012

5. A 90nm 1.8V 512Mb diode-switch PRAM with 266 MB/s read throughput;Lee;IEEE J. Solid-State Circuits,2008

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