Reversibility of surface damage induced in SiC detectors by low intensity laser plasma-Reference-Cited by-同舟云学术

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Reversibility of surface damage induced in SiC detectors by low intensity laser plasma

Published:2018-11 Issue: Volume:86 Page:36-42
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sciuto A.,D’Arrigo G.,Mazzillo M.,Torrisi L.,Calcagno L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Technological breakthroughs in growth control of silicon carbide for high power electronic devices;Matzunami;Jpn. J. Appl. Phys.,2004

2. Silicon carbide and its use as a radiation detector material;Nava;Meas. Sci. Technol.,2008

3. Performance of p-n 4H-SiC film nuclear radiation detector for operation at elevated temperature (375 °C);Kalinina;Tech. Phys. Lett.,2008

4. On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures;Ivanov;Semiconductors,2011

5. Silicon carbide for high resolution X-ray operating up to 100 °C;Bertuccio;Nucl. Instrum. Methods A,2004

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1. SO2 Monitoring With Solid State-Based UV Spectroscopy Compact Apparatus;IEEE Sensors Journal;2019-08-15

2. Large-Area SiC-UV Photodiode for Spectroscopy Portable System;IEEE Sensors Journal;2019-04-15

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