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Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus

  • Published:2004-02 Issue:1-2 Volume:7 Page:59-62
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Lin C.S.,Fang Y.K.,Chen S.F.,Lin C.Y.,Hsieh M.C.,Wang C.C.,Huang H.K.,Wu C.L.,Chang C.S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas;Thin Solid Films;2012-10

2. Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

3. Design and fabrication of the suspended high-Q spiral inductors with X-beams;Microsystem Technologies;2008-02-05

4. Study of Selective Etching of GaAs over AlGaAs and InGaP Semiconductors in High Density Planar Inductively Coupled BCl3/SF6Plasmas;Korean Journal of Materials Research;2005-03-01
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