Selective wet etching for highly uniform GaAs/Al[sub 0.15]Ga[sub 0.85]As heterostructure field effect transistors-Reference-Cited by-同舟云学术

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Selective wet etching for highly uniform GaAs/Al[sub 0.15]Ga[sub 0.85]As heterostructure field effect transistors

Published:1997-01 Issue:1 Volume:15 Page:167
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kitano T.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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