Germanium-on-insulator virtual substrate for InGaP epitaxy-Reference-Cited by-同舟云学术

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Germanium-on-insulator virtual substrate for InGaP epitaxy

Published:2017-11 Issue: Volume:70 Page:17-23
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Bao Shuyu,Lee Kwang Hong,Wang Cong,Wang Bing,Made Riko I.,Yoon Soon Fatt,Michel Jurgen,Fitzgerald Eugene,Tan Chuan Seng

Funder

National Research Foundation Singapore

Silicon Technologies Center of Excellence

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates,;Lubyshev;J. Vac. Sci. Technol. B Microelectron. Nanometer Struct.,2008

2. Ultralow-power LED-enabled on-chip optical communication designed in the III-Nitride and silicon CMOS process integrated platform,;Zhang;IEEE Des. Test.,2014

3. III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects;Roelkens;Laser Photon. Rev.,2010

4. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES),;Chilukuri;Semicond. Sci. Technol.,2007

5. III-V/Si photonics by die-to-wafer bonding;Roelkens;Mater. Today,2007

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1. Retracted Article: PKM2 overexpression protects against 6-hydroxydopamine-induced cell injury in the PC12 cell model of Parkinson's disease via regulation of the brahma-related gene 1/STAT3 pathway;RSC Advances;2019

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