Improved photoelectric properties of p-µc-Si:H/p-a-SiO x :H window layer deposited by RF-PECVD-Reference-Cited by-同舟云学术

Improved photoelectric properties of p-µc-Si:H/p-a-SiO x :H window layer deposited by RF-PECVD

Published:2017-11 Issue: Volume:71 Page:54-60
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Qu Xingling,Jin Jing,Jin Qi,Huang Lu,Zhu Wenqing,Shi Weimin

Funder

National Natural Science Foundation of China

National Key Research and Development Program

Natural Science Foundation of Shanghai

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Electrical, optical and structural investigation of plasma-enhanced chemical-vapor-deposited amorphous silicon oxynitride films for solar cell applications

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