Study on the specific contact resistance of evaporated or electroplated golden contacts to n- and p- type InAs epitaxial layers grown by MBE-Reference-Cited by-同舟云学术

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Study on the specific contact resistance of evaporated or electroplated golden contacts to n- and p- type InAs epitaxial layers grown by MBE

Published:2018-07 Issue: Volume:81 Page:60-63
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Boguski J.,Kolwas K.,Kubiszyn Ł.,Michalczewski K.,Piotrowski J.,Wróbel J.,Gorczyca K.,Kębłowski A.,Martyniuk P.

Funder

Polish National Science Centre

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Semiconductor Material and Device Characterization;Schroder,1998

2. Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

3. Photocathodic deposition of gold alloys for Ohmic contacts to III–V materials

4. Ohmic contacts to p-type InAs

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1. Semiconductor contact layer characterization in a context of hall effect measurements;Metrology and Measurement Systems;2023-07-26

2. Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers;Sensors;2021-08-04

3. Self-catalyst growth and characterization of wurtzite GaAs/InAs core/shell nanowires;Journal of Crystal Growth;2021-06

4. Design of an indium arsenide cell for near-field thermophotovoltaic devices;Journal of Photonics for Energy;2020-06-02

5. Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates;Journal of Crystal Growth;2020-03

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