Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates

Published:2020-03 Issue: Volume:534 Page:125512
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kubiszyn Ł.,Benyahia D.,Michalczewski K.,Hackiewicz K.,Kębłowski A.,Martyniuk P.,Rutkowski J.,Piotrowski J.

Funder

Polish National Science Centre

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices;Gautam;Infrared Phys. Technol.,2013

2. M. Razeghi, B.-M. Nguyen, P.-Y. Delaunay, S. Abdollahi Pour, E.K. Huang, P. Manukar, S. Bogdanov, G. Chen, High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice, in: M. Razeghi, R. Sudharsanan, G.J. Brown (Eds.), San Francisco, California, 2010, p. 76081Q. doi: 10.1117/12.840422.

3. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate;Plis;Semicond. Sci. Technol.,2010

4. Antimonide superlattice complementary barrier infrared detector (CBIRD);Ting;Infrared Phys. Technol.,2011

5. J.F. Klem, J.K. Kim, M.J. Cich, S.D. Hawkins, T.R. Fortune, J.L. Rienstra, Comparison of nBn and nBp mid-wave barrier infrared photodetectors, in: M. Razeghi, R. Sudharsanan, G.J. Brown (Eds.), San Francisco, California, 2010, p. 76081P. doi: 10.1117/12.842772.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. II-VI versus III-V multistage detectors for LWIR and HOT conditions;Infrared Physics & Technology;2024-03

2. Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR;Journal of Electronic Materials;2023-08-29

3. The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature;Infrared Physics & Technology;2023-01

4. Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature;IEEE Electron Device Letters;2022-09

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