Size and density controlled Ag nanocluster embedded MOS structure for memory applications-Reference-Cited by-同舟云学术

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Size and density controlled Ag nanocluster embedded MOS structure for memory applications

Published:2017-06 Issue: Volume:63 Page:1-5
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Biswas Debaleen,Mondal Shyamal,Rakshit Abhishek,Bose Arijit,Bhattacharyya Satyaranjan,Chakraborty Supratic

Funder

Department of Atomic Energy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Review paper: nano-floating gate memory devices;Lee;Electron. Mater. Lett.,2011

2. Review on non volatile memory with high-κ dielectrics: flash for generation beyond 32nm;Zhao;Materials,2014

3. GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots;Kundu;J. Appl. Phys.,2013

4. Size effect of InAs quantum dots grown by metal organic chemical vapour deposition technique in storing electrical charges for memory applications;Islam;RSC Adv.,2015

5. Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature;Kim;Trans. Electr. Electron. Mater.,2012

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4. Ag nanoparticles capped TiO2 nanowires array based capacitive memory;Journal of Materials Science: Materials in Electronics;2021-07-27

5. Observation of ordered arrays of endotaxially grown nanostructures from size-selected Cu-nanoclusters deposited on patterned substrates of Si;Physical Chemistry Chemical Physics;2021

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