Author:
Chini Alessandro,Iucolano Ferdinando
Funder
ENIAC Joint Undertaking Project Energy Efficient Converters using GaN Power Devices under
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Correlation between dynamic RDSon transients and Carbon related buffer traps in AlGaN/GaN HEMTs;Iucolano,2016
2. Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: role of surface traps and buffer leakage;Meneghini;IEEE Trans. Electron Dev.,2015
3. Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation;Chini;Mater. Sci. Semicond. Process.,2018
4. Extraction of dynamic on-resistance in GaN transistors: under soft- and hard-switching conditions;Lu,2011
5. Experimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers;Chini;IEEE Trans. Electron Dev.,2016
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