Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation

Published:2016-02 Issue: Volume:42 Page:251-254
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Boureau Victor,Benoit Daniel,Warot Bénédicte,Hÿtch Martin,Claverie Alain

Funder

CPER program

French National Research Agency

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

2. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

3. Visible photoluminescence from nanocrystallite Ge embedded in a glassySiO2matrix: Evidence in support of the quantum-confinement mechanism

4. Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Technology Computer‐Aided Design Model for SiGe Oxidation and Ge Diffusion Along Oxide/SiGe Interfaces;physica status solidi (a);2024-07-19

2. 2D Strain Mapping in Sub-10nm SiGe Layer with High-Resolution Transmission Electron Microscopy and Geometric Phase Analysis;Nano Hybrids and Composites;2022-08-31

3. Scanning x-ray microscopy imaging of strain relaxation and fluctuations in thin patterned SiGe-on-insulator nanostructures;Journal of Applied Physics;2021-03-07

4. Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method;Semiconductor Science and Technology;2019-10-30

5. Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature;Materials Science in Semiconductor Processing;2019-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3