Oxygen behavior in germanium during melting laser thermal annealing-Reference-Cited by-同舟云学术

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Oxygen behavior in germanium during melting laser thermal annealing

Published:2016-02 Issue: Volume:42 Page:196-199
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Milazzo R.,Impellizzeri G.,Cuscunà M.,De Salvador D.,Mastromatteo M.,La Magna A.,Fortunato G.,Priolo F.,Privitera V.,Carnera A.,Napolitani E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Germanium-Based Technologies – From Materials to Devices;Claeys,2007

2. Academic and industry research progress in germanium nanodevices

3. Systematic study of shallow junction formation on germanium substrates

4. ITRS, 2013 edition. Available at: 〈http://www.itrs.net〉.

5. Diffusion ofn-type dopants in germanium

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2. Recrystallization of the Argon-Plasma Immersion Implantation-Induced Amorphous Germanium with Laser Thermal Process;2023

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4. Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities;Applied Surface Science;2021-04

5. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021

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