Iterative method for obtaining nonuniform grinding-induced residual stress distribution of silicon wafers based on global deformation

Author:

Liu HaijunORCID,Yang Tao,Tian Xiaoqing,Chen Shan,Dong Fangfang,Han Jiang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. A load identification method for the grinding damage induced stress (GDIS) distribution in silicon wafers;Zhou;Int. J. Mach. Tool Manufact.,2016

2. Integrated circuit packaging review with an emphasis on 3D packaging;Lancaster;Integration,2018

3. Ultra-thin wafer technology and applications: a review;Dong;Mater. Sci. Semicond. Process.,2020

4. Subsurface damage detection on ground silicon wafers using polarized laser scattering;Yin;J. Manuf. Sci. Eng.,2019

5. Residual stress distribution in silicon wafers machined by rotational grinding;Zhou;J. Manuf. Sci. Eng.,2017

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