A silicon-on-insulator metal–semiconductor field-effect transistor with an L-shaped buried oxide for high output-power density-Reference-Cited by-同舟云学术

A silicon-on-insulator metal–semiconductor field-effect transistor with an L-shaped buried oxide for high output-power density

Published:2014-03 Issue: Volume:19 Page:124-129
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ramezani Zeinab,Orouji Ali A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

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4. S. Merchant, E. Arnold, H. Baumgart, S. Mukherjee, H. Pein, R. Pinker, in: Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, 1991, pp. 31–35.

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