A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE
2. Commercial impact of silicon carbide
3. Two-stage ultrawide-band 5-W power amplifier using SiC MESFET
4. Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs
5. Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A novel 4H–SiC MESFET with P-type doping zone and recessed buffer layer;Materials Science in Semiconductor Processing;2022-06
2. Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications;Journal of Electronic Materials;2022-05-16
3. Modeling of Drain Induced Barrier Lowering Effect for Bi-Material Buffer Gate 4H-SiC Metal Semiconductor Field Effect Transistor;Ferroelectrics;2019-07-04
4. An Improved UU-MESFET with High Power Added Efficiency;Micromachines;2018-11-05
5. Improved L-gate 4H-SiC MESFETs with partial p-type spacer;Materials Science in Semiconductor Processing;2013-04
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