Improved L-gate 4H-SiC MESFETs with partial p-type spacer-Reference-Cited by-同舟云学术

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Improved L-gate 4H-SiC MESFETs with partial p-type spacer

Published:2013-04 Issue:2 Volume:16 Page:352-355
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Jia Hujun,Yang Yintang,Zhang Hu

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. M. Östling, R. Ghandi, C. Zetterling, in: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's, 2011, pp. 10–15.

2. S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE

3. Improved performance of SiC MESFETs using double-recessed structure

4. Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs

5. Technology of passivated surface channel MESFETs with modified gate structures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved 4H–SiC MESFET with recessed and multi-concentration doped channel;Micro and Nanostructures;2023-02

2. A novel SOI MESFET to spread the potential contours towards the drain;International Journal of Electronics;2020-02-19

3. Clinical analysis of bone metastasis of gastric cancer: incidence, clinicopathological features and survival;Future Oncology;2019-07

4. A novel 4H-SiC MESFET by lateral insulator region to improve the DC and RF characteristics;International Journal of Electronics;2017-10-19

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