Stress-induced structural phase transition of 3C–SiC with TLK structure in a nano-abrading process-Reference-Cited by-同舟云学术

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Stress-induced structural phase transition of 3C–SiC with TLK structure in a nano-abrading process

Published:2020-06 Issue: Volume:112 Page:104893
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhou Piao,Zhu Yongwei,Sun Tao,Lin Lin,Li Jun,Wang Zikun,Li Xue

Funder

National Natural Science Foundation of China

Jiangsu Province Key Laboratory of Precision and Micro-manufacturing Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. The current understanding on the diamond machining of silicon carbide;Goel;J. Phys. Appl. Phys.,2014

2. Deposition of epitaxial silicon carbide films using high vacuum MOCVD method for MEMS applications;Lim;Thin Solid Films,2004

3. A comparative study on the material removal mechanisms of 6H-SiC polished by semi-fixed and fixed diamond abrasive tools;Luo;Wear,2016

4. Possibility of high-pressure transformation during nanoindentation of SiC;Mishra;Acta Mater.,2009

5. Molecular dynamics simulation of structural transformation in silicon carbide under pressure;Shimojo;Phys. Rev. Lett.,2000

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3. Two-dimensional structure evolution and formation of silicon carbides and diamonds in a nano-abrasion process;Tribology International;2023-11

4. Understanding of the effect of wear particles removal from the surface on grinding silicon carbide by molecular dynamics simulations;Diamond and Related Materials;2023-08

5. Novel polymeric phases proposed by cold-pressing SiC tubes;Journal of Physics: Condensed Matter;2022-07-28

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