Convex-like GaAs nanowires grown on Si (111) substrates-Reference-Cited by-同舟云学术

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Convex-like GaAs nanowires grown on Si (111) substrates

Published:2020-03 Issue: Volume:107 Page:104817
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Arpapay Burcu,Serincan Uğur

Funder

Eskişehir Technical University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference45 articles.

1. Semiconductor nanowire devices;Hayden;Nano Today,2008

2. Large-scale integration of semiconductor nanowires for high-performance flexible electronics;Liu;ACS Nano,2012

3. III-V nanowires: synthesis, property manipulations, and device applications;Fang;J. Nanomater.,2014

4. Nanowires for high-efficiency, low-cost solar photovoltaics;Zhang;Crystals,2019

5. Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties;Dhindsa;Nanotechnology,2014

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy;Materials Science in Semiconductor Processing;2020-06

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