Layer and size distribution control of CVD-grown 2D MoS2 using ALD-deposited MoO3 structures as the precursor-Reference-Cited by-同舟云学术

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Layer and size distribution control of CVD-grown 2D MoS2 using ALD-deposited MoO3 structures as the precursor

Published:2020-03 Issue: Volume:108 Page:104880
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Demirtaş Mustafa,Odacı Cem,Shehu Yahaya,Perkgöz Nihan Kosku,Ay Feridun

Funder

Scientific and Technological Research Council of Turkey

Eskişehir Technical University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotechnol.,2012

3. Emerging photoluminescence in monolayer MoS2;Splendiani;Nano Lett.,2010

4. Stretching and breaking of ultrathin MoS2;Bertolazzi;ACS Nano,2011

5. A comparative study of lattice dynamics of three- and two-dimensional MoS2;Ataca;J. Phys. Chem. C,2011

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1. Exploring channel length effects in 2D MoS2-Based memtransistors and their Synaptic behavior;Materials Science in Semiconductor Processing;2024-08

2. Wafer-Scale ALD Synthesis of MoO3 Sulfurized to MoS2;Crystals;2024-07-24

3. Recent Advances in Layered MX2-Based Materials (M = Mo, W and X = S, Se, Te) for Emerging Optoelectronic and Photo(electro)catalytic Applications;Catalysts;2024-06-17

4. Electrodeposited Mo_xS_yO_z/Ni Tribological Coatings;Langmuir;2024-03-08

5. Atomic Layer Deposition of Transition-Metal Dichalcogenides;Crystal Growth & Design;2024-01-04

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