Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography-Reference-Cited by-同舟云学术

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Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography

Published:2006-08 Issue:4-5 Volume:9 Page:812-816
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Berbezier I.,Karmous A.,Szkutnik P.D.,Ronda A.,Sgarlata A.,Balzarotti A.,Castrucci P.,Scarselli M.,De Crescenzi M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Volatile and non-volatile memories in silicon with nano-crystal storage

2. Local Strain-Mediated Chemical Potential Control of Quantum Dot Self-Organization in Heteroepitaxy

3. Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning

4. Formation and ordering of Ge nanocrystals onSiO2

5. Ge dot organization on Si substrates patterned by focused ion beam

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1. Spectro-ellipsometric probing of wetting, nucleation, and dot/island formation during photo-excited chemical vapor deposition of Ge on SiO₂ substrate;Journal of Vacuum Science & Technology B;2022-12

2. Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates;Japanese Journal of Applied Physics;2021-01-01

3. 5.5 Zero-dimensional systems (quantum dots);Growth and Structuring;2013

4. Design of free patterns of nanocrystals with ad hoc features via templated dewetting;Applied Physics Letters;2012-07-02

5. Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09

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