Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser-Reference-Cited by-同舟云学术

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Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser

Published:2012-02 Issue:1 Volume:15 Page:86-90
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Li S.G.,Gong Q.,Cao C.F.,Wang X.Z.,Chen P.,Yue L.,Liu Q.B.,Wang H.L.,Ma C.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique

2. Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

3. Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

4. High performance external cavity InAs/InP quantum dot lasers

5. Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

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