Low atomic number silicon nitride films for transmission electron microscopy-Reference-Cited by-同舟云学术

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Low atomic number silicon nitride films for transmission electron microscopy

Published:2019-01 Issue: Volume:89 Page:1-5
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Fu Jianyu,Xiong Wenjuan,Shang Haiping,Liu Ruiwen,Li Junfeng,Wang Weibing,Wang Wenwu,Chen Dapeng

Funder

National Natural Science Foundation of China

Hi-Tech Research Development Program of China

Chinese Academy of Sciences-Peking University Pioneer Cooperation Team

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Preparation and characterization of oxide-modified sapium sebiferum oil-based polyurethane composites with improved thermal and mechanical properties;Wu;Polymers,2018

2. Understanding materials challenges for rechargeable ion batteries with in situ transmission electron microscopy;Yuan;Nat. Commun.,2017

3. Specific, sensitive, high-resolution detection of protein molecules in eukaryotic cells using metal-tagging transmission electron microscopy;Risco;Structure,2012

4. Direct observation of wet biological samples by graphene liquid cell transmission electron microscopy;Park;Nano Lett.,2015

5. Advances in windowed gas cells for in-situ TEM studies;Wu;Nano Energy,2015

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate-free silicon nitride films for metamaterial absorbers designed with Lorentz quadratic model;Materials Science in Semiconductor Processing;2024-01

2. A Comparative Study of Fractional Order Models on State of Charge Estimation for Lithium Ion Batteries;Chinese Journal of Mechanical Engineering;2020-07-13

3. Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications;ECS Journal of Solid State Science and Technology;2020-01-08

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