AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates-Reference-Cited by-同舟云学术

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AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates

Published:2003-10 Issue:5-6 Volume:6 Page:461-464
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kuno T.,Akane T.,Jinno S.,Hirata T.,Yang Y.,Isogai Y.,Watanabe N.,Fujiwara Y.,Nakamura A.,Takeda Y.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs;Tanaka;Appl Phys Lett,1996

2. Epitaxial growth of ErAs on (100)GaAs;Palmstrøm;Appl Phys Lett,1988

3. Lattice-matched Sc1−xErxAs/GaAs heterostructures;Palmstrøm;Appl Phys Lett,1990

4. Molecular beam epitaxial growth of lattice matched GaAs/ErP0.6As0.4/(001) and (111) GaAs heterostructures;Caulet;J Cryst Growth,1990

5. Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures;Lee;J Vac Sci Technol B,1998

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface morphology of ErP layers on InP and Ga0.52In0.48P;Thin Solid Films;2006-10

2. SEM observation of InP/ErP/InP double heterostructures grown on InP(001), InP(111)A, and InP(111)B;Materials Science in Semiconductor Processing;2003-10

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