SEM observation of InP/ErP/InP double heterostructures grown on InP(001), InP(111)A, and InP(111)B-Reference-Cited by-同舟云学术

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SEM observation of InP/ErP/InP double heterostructures grown on InP(001), InP(111)A, and InP(111)B

Published:2003-10 Issue:5-6 Volume:6 Page:473-476
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hirata T.,Akane T.,Jinno S.,Kuno T.,Yang Y.,Fujiwara Y.,Nakamura A.,Takeda Y.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs;Tanaka;Appl Phys Lett,1996

2. Epitaxial growth of ErAs on (100)GaAs;Plamstrøm;Appl Phys Lett,1988

3. Lattice-matched Sc1−xErxAs/GaAs heterostructures;Palmstrøm;Appl Phys Lett,1990

4. Growth of rare-earth arsenide/(100)GaAs and GaAs/rare-earth arsenide/(100)GaAs structures;Palmstrφm;J Vac Sci Technol B,1989

5. Molecular beam epitaxial growth of lattice matched GaAs/ErP0.6As0.4/(001) and (111) GaAs heterostructures;Caulet;J Crys Growth,1990

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