Recombination activity of nickel in Czochralski silicon during rapid thermal process
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Mechanisms of transition-metal gettering in silicon;Myers;J Appl Phys,2000
2. Technique for preserving lifetime in diffused silicon;Silverman;J Electrochem Soc,1958
3. The properties of nickel in silicon;Ghandi;Proc IEEE,1969
4. Recombination properties of structurally well defined NiSi2 precipitation in silicon;Kittler;Appl Phys Lett,1991
5. Characterization of nickel contamination in float zone and Czochralsky silicon wafers by using electrolytic metal tracer or microwave photoconductivity decay measurement;Walz;Jpn J Appl Phys,1995
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