Defects in nitride semiconductors: From nanoscale imaging to macroscopic device behavior
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference30 articles.
1. Microwave performance of AlGaN/GaN inverted MODFET's
2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
3. Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
4. The blue laser diode;Nakamura,1997
5. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Detection of oxidation region of flexible integrated circuit substrate based on topology mapping;Multimedia Tools and Applications;2018-08-16
2. CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects;IEEE Transactions on Nanotechnology;2016-11
3. Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements;IEEE Electron Device Letters;2016-05
4. Selective etching of dislocations in GaN grown by low-pressure solution growth;Journal of Crystal Growth;2010-10
5. Inducing Nanoscale Morphology Changes of Pentaerythritol Tetranitrate Using a Heated Atomic Force Microscope Cantilever;Journal of Energetic Materials;2008-12-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3