Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors-Reference-Cited by-同舟云学术

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Published:2006-02 Issue:1-3 Volume:9 Page:283-287
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Li Z.,Li C.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

2. Kimerling LC. In: Radiation Effects in Semiconductors, Bristol, UK: The Institute of Physics; 1976, Institute of Physics Conference Series, vol. 31, 1977, p. 221.

3. Modeling of the frequency dependent C-V characteristics of neutron irradiated p/sup +/-n silicon detectors after the type inversion in the space charge region

4. Systematic modelling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation

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