Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer-Reference-Cited by-同舟云学术

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Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Published:2011-06 Issue:2 Volume:14 Page:139-145
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tunç Tuncay,Altindal Şemsettin,Uslu İbrahim,Dökme İlbilge,Uslu Habibe

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference53 articles.

1. Electrical properties of MOS and MIS diodes using an electrochemically prepared poly(N-methylpyrrole)

2. Electrical properties of junction between aluminium and poly(aniline)–poly(vinyl chloride) composite

3. Fabrication and characteristics of Schottky diode based on composite organic semiconductors

4. Determination of electronic properties of Al/p-Si/composite organic semiconductor (MIOS) junction barrier by current–voltage and capacitance–voltage methods

5. Electrical and photovoltaic properties of a n-Si/chitosan/Ag photodiode

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