The electrical properties and distribution of indium in germanium crystals-Reference-Cited by-同舟云学术

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The electrical properties and distribution of indium in germanium crystals

Published:2018-02 Issue: Volume:74 Page:342-346
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Guojian,Mei Hao,Meng Xianghua,Mei Dongming,Yang Gang

Funder

NSF

DOE (Department of Energy)

State of South Dakota

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Vacancy-mediated dopant diffusion activation enthalpies for germanium

2. Intrinsic and extrinsic diffusion of indium in germanium

3. Vacancy–indium clusters in implanted germanium

4. Electrical and structural properties of In-implanted Si1−xGex alloys

5. Segregation of Impurities During the Growth of Germanium and Silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited;Applied Sciences;2022-11-24

2. Microwear mechanism of monocrystalline germanium;Wear;2022-04

3. Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics;The European Physical Journal C;2020-10

4. Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts;Journal of Instrumentation;2019-02-14

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