Author:
Martens K.,Simoen E.,De Jaeger B.,Meuris M.,Groeseneken G.,Maes H.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. De Jaeger B, Bonzom R, Leys F, Meuris M, Heyns M. Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-on-insulator substrates. In: Proceedings of the 14th conference on INFOS, 2005. p. 82–5.
2. Croon J, Kaczer B, Groeseneken G, Meuris M. Experimental analysis of a Ge–HfO2–TaN gate stack with a large amount of interface states. In: Proceedings of the ICMTS, 2005. p. 191–6.
3. Martens K, Kaczer B, Roussel P, Maes H, Groeseneken G. Interface trap characterization and Fermi-level pinning in Si-passivated Ge/HfO2 capacitors. In: Proceedings of the ECS fall meeting, 2005, to be published.
4. A new interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development;Martens;IEEE Electron Dev Lett,2006
5. Germanium n-type shallow junction activation dependences;Chui;Appl. Phys. Lett.,2005
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献