Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germanium-Reference-Cited by-同舟云学术

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Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germanium

Published:2006-08 Issue:4-5 Volume:9 Page:788-793
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Arutyunov N.Yu.,Emtsev V.V.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Emtsev VV, Mashovets TV. Impurities and point defects in semiconductors, in Russian, Izdatel'stvo Radio i Sviaz’, Moscow, 1981. p. 248.

2. Atomic environment of positron in diamond-like semiconductors and related materials: ACAR data;Arutyunov,2006

3. Positron dynamics in solids

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1. Radiation-produced defects in germanium: Experimental data and models of defects;Semiconductors;2017-12

2. Positron probing of disordered regions in neutron-irradiated silicon;physica status solidi (b);2016-10-17

3. Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion;Physica B: Condensed Matter;2009-12

4. Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations;Physical Review B;2008-11-03

5. Elemental specificity of ion cores and ionization entropy of vacancy-group-V-impurity atom pairs in Ge crystals: ACAR and DLTS data;Materials Science in Semiconductor Processing;2008-10

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