Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Gettering mechanisms in silicon;Polignano;J Appl Phys,1988
2. Thermally induced microdefects in Czochralski-grown silicon: nucleation and growth behavior;Kishino;Jpn J Appl Phys,1982
3. On the properties of the intrinsic point defects in silicon: a perspective from crystal growth and wafer processing;Falster;Phys Stat Sol (B),2000
4. Oxygen effect on mechanical properties;Sumino,1994
5. The identification, annihilation, and suppression of nucleation sites responsible for silicon epitaxial stacking faults;Rozgonyi;J Electrochem Soc,1976
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2. Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction;AIP Advances;2020-10-01
3. Gettering and Passivation of Metals in Silicon and Germanium;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
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5. Effect of Germanium Doping on Thermal Evolution of Neutron Irradiation Induced Defects in Czochralski Si;ECS Transactions;2013-03-08
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