Author:
Takakura K.,Ohyama H.,Hayama K.,Aoki Y.,Eneman G.,Verheyen P.,Simoen E.,Loo R.,Claeys C.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Uchida K, Zednik R, Lu C-H, Jagannathan H, McVittie J, McIntryre PC, et al. IEDM Tech Dig 2004;229.
2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
3. Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices
4. On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers
5. Claeys C, Simoen E, Eneman G. In: Proceedings of the 25th international conference on microelectronics—MIEL 2006, vol. 1. 2006. p. 67.
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