Divacancy-related complexes in Si(1−x)Ge(x)-Reference-Cited by-同舟云学术

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Divacancy-related complexes in Si(1−x)Ge(x)

Published:2006-08 Issue:4-5 Volume:9 Page:525-530
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Khirunenko L.I.,Pomozov Yu.V.,Sosnin M.G.,Trypachko M.O.,Duvanskii A.V.,Abrosimov N.V.,Riemann H.,Lastovskii S.B.,Murin L.I.,Markevich V.P.,Peaker A.R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

2. Properties of crystalline silicon, EMIS data review series no. 20;Svensson,1999

3. Radiation effects in semiconductors 1976, Institute of Physics Conference Series no. 31;Kimerling,1977

4. Electron‐irradiation‐induced divacancy in lightly doped silicon

5. Defect production and lifetime control in electron and γ‐irradiated silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+–p structures;AIP Conference Proceedings;2014

2. Production and evolution of A-centers in n-type Si1−xGex;Journal of Applied Physics;2013-03-21

3. Radiation effects in Si-Ge quantum size structure (Review);Semiconductors;2013-02

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