Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films-Reference-Cited by-同舟云学术

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Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films

Published:2006-08 Issue:4-5 Volume:9 Page:650-654
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Christensen J.S.,Kuznetsov A.Yu.,Gunnaes A.E.,Svensson B.G.,Radamson H.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Strain relaxation and dislocations in SiGe/Si structures;Mooney;Mater Sci Eng,1996

2. Formation of cylindricaln/pjunction diodes by arsenic enhanced diffusion along interfacial misfit dislocations inp‐type epitaxial Si/Si(Ge)

3. Film thickness constraints for manufacturable strained silicon CMOS

4. Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures

5. INTERMITTENT DIFFUSION AND ITS INFLUENCE ON DOPING PROFILES IN SEMICONDUCTORS

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures;Nano Letters;2019-02-11

2. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures;ECS Journal of Solid State Science and Technology;2014

3. Spin-on-dopant phosphorus diffusion in germanium thin films for near-infrared detectors;physica status solidi (c);2013-12-09

4. Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge;IEEE Transactions on Electron Devices;2013-11

5. High responsivity near-infrared photodetectors in evaporated Ge-on-Si;Applied Physics Letters;2012-08-20

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