Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses-Reference-Cited by-同舟云学术

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Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Published:2006-08 Issue:4-5 Volume:9 Page:655-658
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Rosiński M.,Badziak J.,Czarnecka A.,Gasior P.,Parys P.,Pisarek M.,Turan R.,Wołowski J.,Yerci S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Plasma immersion ion implantation using plasmas generated by radio frequency techniques

2. Metal plasma immersion ion implantation and deposition: a review

3. Evidence for a strong correlation between the amount of surface carbon and the tribological behaviour of ion-treated steels

4. Semiconductor applications of plasma immersion ion implantation

5. Laser-driven ion source for reduced-cost implantation of metal ions for strong reduction of dry friction and increased durability

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on developments in LIS (laser ion source) at the IPPLM and its possible applications in photonics;Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013;2013-10-25

2. Laser generated Ge ions accelerated by additional electrostatic field for implantation technology;Applied Surface Science;2013-05

3. Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO2 substrates;Review of Scientific Instruments;2012-02

4. Ion energy distributions in laser-produced plasmas with two collinear pulses;Plasma Sources Science and Technology;2012-02-01

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