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Study on subsurface damage mechanism of gallium nitride in nano-grinding

  • Published:2021-06 Issue: Volume:128 Page:105760
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhang Chaoyue,Dong Zhigang,Yuan Song,Guo Xiaoguang,Kang Renke,Guo Dongming

Funder

National Natural Science Foundation of China

Science Fund for Creative Research Groups

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. GaN-based RF power devices and amplifiers[J];Mishra;Proc. IEEE,2008

2. Effects of dislocation on physical properties of Gallium nitride materials [J];Ni;Materials Bulletin,2003

3. Chemical polishing of bulk and epitaxial GaN[J];Weyher;J. Cryst. Growth,1997

4. Nanotribological properties of Ga- and N-faced bulk gallium nitride surfaces determined by nano scratch experiments[J];Guo;J. Mater.,2019

5. Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing[J];Arjunan;Appl. Surf. Sci.,2008

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