Electrical properties of Au–Sb/p-GaSe:Gd Schottky barrier diode-Reference-Cited by-同舟云学术

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Electrical properties of Au–Sb/p-GaSe:Gd Schottky barrier diode

Published:2009-12 Issue:6 Volume:12 Page:243-247
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Duman Songül

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Optical and electrical properties of GaSe thin films

2. Fabrication and characterization of TO/GaSe/(Ag, Au) Schottky diodes

3. Metal semiconductor contacts;Rhoderick,1988

4. Injection and thermodepolarization currents in GaSe single crystals

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and characterization of Au/n-GaSe4/p-Si/Al Schottky-type thin film heterojunctions;The European Physical Journal Applied Physics;2012-08

2. Electrical characterization of Ag/p-GaSe:Gd schottky barrier diodes;Physica E: Low-dimensional Systems and Nanostructures;2010-05

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