Preparation and characterization of Au/n-GaSe4/p-Si/Al Schottky-type thin film heterojunctions-Reference-Cited by-同舟云学术

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Preparation and characterization of Au/n-GaSe4/p-Si/Al Schottky-type thin film heterojunctions

Published:2012-08 Issue:2 Volume:59 Page:20101
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

El-Nahass M.M.,Zedan I.T.,Atta A.A.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap/2012120150/pdf

Reference40 articles.

1. Dielectric properties of a-GaxSe100−x alloys (0⩽x⩽10)

2. Optical properties of Ga2Se3 and Ga2Se3:Co2+ single crystals

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3. Current–voltage and photovoltaic characteristics of n-Ge10Se80In10/p-Si heterojunction;Materials Science in Semiconductor Processing;2014-08

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