Paving the way toward the world's first 200mm SiC pilot line-Reference-Cited by-同舟云学术

Paving the way toward the world's first 200mm SiC pilot line

Published:2021-11 Issue: Volume:135 Page:106088
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Musolino Mattia^ORCID,Xu Xueping,Wang Hui,Rengarajan Varathajan,Zwieback Ilya,Ruland Gary,Crippa Danilo,Mauceri Marco,Calabretta Michele^ORCID,Messina Angelo

Funder

European Commission

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Review of SiC crystal growth technology;Wellmann;Semicond. Sci. Technol.,2018

2. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017

3. Bulk growth of large area SiC crystals;Powell;Mater. Sci. Forum,2016

4. The “first and euRopEAn siC eigTh Inches pilOt line” REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development;Bieniek;TechConnect Briefs,2019

5. The first and euRopEAn siC eighT Inches pilOt liNe: a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronics Sector;Messina,2020

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