Ab-initio simulation of self-interstitial in germanium-Reference-Cited by-同舟云学术

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Ab-initio simulation of self-interstitial in germanium

Published:2008-10 Issue:5-6 Volume:11 Page:328-331
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Śpiewak P.,Vanhellemont J.,Sueoka K.,Kurzydłowski K.J.,Romandic I.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. Projector augmented-wave method

3. From ultrasoft pseudopotentials to the projector augmented-wave method

4. Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

5. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

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1. Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance;Journal of Electronic Materials;2024-01-26

2. Electronic properties and defect levels induced by n/p-type defect-complexes in Ge;Materials Science in Semiconductor Processing;2022-11

3. Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge;Journal of Materials Science;2019-05-03

4. Germanium crystals;Single Crystals of Electronic Materials;2019

5. Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study;Materials Science in Semiconductor Processing;2019-01

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