Reliability and performance improvement of InGaZnO thin film transistors with organosilicon passivation layers-Reference-Cited by-同舟云学术

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Reliability and performance improvement of InGaZnO thin film transistors with organosilicon passivation layers

Published:2021-01 Issue: Volume:121 Page:105390
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Chang,Qin Houyun,Liu Yiming,Wei Song,Wang Hongbo,Zhao Yi

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

2. The Fabrication and Sensing Characteristics of Arrayed Flexible IGZO/Al Urea Biosensor Modified by Graphene Oxide

3. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boosting the responsivity of amorphous-Ga2O3 solar-blind photodetector via organosilicon surface passivation;Applied Physics Letters;2024-02-19

2. The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment;ACS Applied Electronic Materials;2023-08-16

3. Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content;Solid-State Electronics;2023-02

4. Increasing the Gas Response of Ozone Sensors Based on Solution-Processed InGaZnO by Tuning the Size of the Nanostructure;ECS Journal of Solid State Science and Technology;2022-05-31

5. Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors;Journal of Applied Physics;2022-03-14

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