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Native oxide removal from SiGe using mixtures of HF and water delivered by aqueous, gas, and supercritical CO2 processes

  • Published:2005-02 Issue:1-3 Volume:8 Page:231-237
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Xie Bo,Montaño-Miranda Gerardo,Finstad Casey C.,Muscat Anthony J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. SiGe technology;Mooney;Annu Rev Mater Sci,2000

2. Silicon–germanium heterojunction bipolar transistors;Cressler,2003

3. Low-temperature preparation of oxygen- and carbon-free silicon and silicon–germanium surfaces for silicon and silicon–germanium epitaxial growth by rapid thermal chemical vapor deposition;Carroll;J Electrochem Soc,2000

4. Gas-phase HF/vapor etching of thermal silicon dioxide films;Montano-Miranda;Ultra Clean Process Silicon Surf V,2003

5. Determination of chemistry and microstructure in SiOx (0.1;Shallenberger;J Vac Sci Technol A-Vac Surf Films,1996

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1. Cryogenic Aerosols and Supercritical Fluid Cleaning and Surface Conditioning ∗;Handbook of Silicon Wafer Cleaning Technology;2018

2. Combined wet and dry cleaning of SiGe(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-07

3. Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge;Journal of Crystal Growth;2011-06

4. Elaboration and characterization of barium silicate thin films;Micron;2008-12

5. The effectiveness of HCl and HF cleaning of Si0.85Ge0.15 surface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-09
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